150V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：759.18 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =42mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：361.99 Kbytes 页数：2 Pages

ISC

无锡固电

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：717.71 Kbytes 页数：8 Pages

Fairchild

仙童半导体

200V N-Channel MOSFET

200V N-Channel MOSFET

文件：712.47 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=48A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.05Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：363 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.6 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=61A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =26mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：362.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：361.43 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

250V N-Channel MOSFET

文件：811.88 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=64A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver

文件：362.91 Kbytes 页数：2 Pages

ISC

无锡固电