200V LOGIC N-Channel MOSFET

文件：742.67 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：545.55 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.53 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：718.01 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=19.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.21 Kbytes 页数：2 Pages

ISC

无锡固电

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 22A, 300V, RDS(on) = 0.16Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 40pF) • Fast switching • 100

文件：769.42 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-24A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.125Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：363.23 Kbytes 页数：2 Pages

ISC

无锡固电

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：637.22 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：FQA24N50；Package：TO-3PN；N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ

Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

文件：1.63157 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：362.54 Kbytes 页数：2 Pages

ISC

无锡固电