丝印：FQA24N50；Package：TO-3PN；N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ

Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

文件：1.63157 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FQA24N50；Package：TO-3PN；N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ

Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar

文件：1.63157 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：734.41 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：362.54 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：620.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PN packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

文件：323.65 Kbytes 页数：2 Pages

ISC

无锡固电