FQA34N20L

200V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQA34N20L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FQA34N25

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FQA34N25

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FQA35N40

400V N-Channel MOSFET

Features •35A,400V,RDS(on)=0.105Ω@VGS=10V •Lowgatecharge(typical110nC) •LowCrss(typical65pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQA35N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.105Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FQA36P15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-36A@TC=25℃ ·DrainSourceVoltage- :VDSS=-150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FQA36P15

Marking：FQA36P15；Package：TO-3PN；P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36A,-150V,RDS(on)=90mΩ(Max)@VGS=-10V,ID=-18A LowGateCharge(Typ.81nC) LowCrss(Typ.110pF) 100%AvalancheTested 175°CMaximumJunctionTemperatureRating Description ThisP-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconducto

FQA36P15_V01

P-Channel QFET® MOSFET -150 V, -36 A, 90 mΩ

Features -36A,-150V,RDS(on)=90mΩ(Max)@VGS=-10V,ID=-18A LowGateCharge(Typ.81nC) LowCrss(Typ.110pF) 100%AvalancheTested 175°CMaximumJunctionTemperatureRating Description ThisP-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconducto

FQA38N30

300V N-Channel MOSFET

Description UniFET™MOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable