FGAF30S65AQ中文资料IGBT, 650 V,30A Field Stop Trench数据手册ONSEMI规格书

描述 Description

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications

特性 Features

•Maximum junction temperature : TJ = 175°C
• High Reliability
•Positive temperaure co-efficient for easy parallel operating
•High current capability
• Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 30A
•High input impedance
• 100% of the Parts tested for ILM
• Fast switching
•Tightened parameter distribution
•RoHS compliant
• IGBT with monolithic reverse conducting diode

应用 Application

• PFC
• Air-conditioner
• Induction Heating
• Welder
• Industrial

简介

FGAF30S65AQ属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGAF30S65AQ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。