丝印：FGAF30S65；Package：TO-3PF-3L；Field Stop Trench IGBT, 30 A, 650 V

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positi

文件：302.1 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT, 650 V,30A Field Stop Trench

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications •Maximum junction temperature : TJ = 175°C\n• High Reliability\n•Positive temperaure co-efficient for easy parallel operating\n•High current capability\n• Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 30A\n•High input impedance\n• 100% of the Parts tested for ILM\n• Fast switching\n•Tight;

ONSEMI

安森美半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 30A TO-3PF

ONSEMI

安森美半导体

Low Reverse Recovery Current

文件：722.47 Kbytes 页数：3 Pages

MICROSS