30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

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FAIRCHILD

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N- and P-Channel 30 V (D-S) MOSFET

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30V N & P-Channel PowerTrench® MOSFETs

General Description\nThese N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.\nThese devices are well suited for low voltage and battery pow • Q1 4.1 A, 30V.\n   RDS(ON) = 80 mW @ VGS = 10 V\n   RDS(ON) = 130 mW @ VGS = 4.5 V\n• Q2 –3.4 A, 30V.\n   RDS(ON) = 130 mW @ VGS = –10 V\n   RDS(ON) = 200 mW @ VGS = –4.5 V\n• Low gate charge\n• High performance trench technology for extremely low RDS(ON).\n• High power and handling capability in ;

ONSEMI

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GaAlAs Laser Diode

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60V Complementary PowerTrench MOSFET

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Mobile I/O Companion Supporting Key-Scan, I/O Expansion, PWM, and ACCESS.bus Host Interface

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