N-Channel PowerTrench짰 MOSFET 30 V, 9 A, 20.0 m廓

General Description The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. Features „Max rDS(on) =20.0 mΩat

文件：286.63 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，9A，20.0mΩ

FDS8882设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 •VGS = 10V，ID = 9 A时，最大rDS(on) = 20.0mΩ\n•VGS = 4.5 V，ID = 8 A时，最大rDS(on) = 22.5mΩ\n•高性能沟道技术可实现极低的rDS(on)和快速开关\n•高功率和高电流处理能力\n•终端无引线且符合RoHS标准;

ONSEMI

安森美半导体

Dual, Low-Noise, Low-Dropout, 160mA Linear Regulators in SOT23

文件：244.15 Kbytes 页数：8 Pages

MAXIM

美信

Dual, Low-Noise, Low-Dropout, 160mA Linear Regulators in SOT23

文件：244.15 Kbytes 页数：8 Pages

MAXIM

美信

Dual, Low-Noise, Low-Dropout, 160mA Linear Regulators in SOT23

文件：244.15 Kbytes 页数：8 Pages

MAXIM

美信