Dual 5 A, 20 V Synchronous Step-Down

GENERAL DESCRIPTION The ADP2325 is a full featured, dual output, step-down dc-to-dc regulator based on a current mode architecture. The ADP2325 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width modulation (PWM) channels can be

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亚德诺

20 V, 6 A Synchronous Step-Down

GENERAL DESCRIPTION The ADP2381 is a current mode control, synchronous, step down, dc-to-dc regulator. It integrates a 44 mΩ power MOSFET and a low-side driver to provide a high efficiency solution. The ADP2381 runs from an input voltage of 4.5 V to 20 V and can deliver 6 A of output current. T

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Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET

GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-to-dc regulator based on current-mode architecture. The ADP2323 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width mod ulation (PWM) channels can be c

文件：2.11252 Mbytes 页数：32 Pages

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N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed. Features rDS

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FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET

文件：603.52 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，11.6A，10mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低 rDS(on) 和高速开关进行了优化。 •RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A\n•RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A\n•高性能沟道技术可实现极低的rDS(ON)\n•低栅极电荷\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：603.52 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体