丝印：FDS8638；Package：SO-8；N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：373.21 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 40 V, 18 A, 4.3 m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ■ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID =

文件：286.36 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，40V，18A，4.3mΩ

此N沟道MOSFET器件采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •VGS = 10 V，ID = 18 A时，最大rDS(on) = 4.3 mΩ\n•VGS = 4.5 V，ID = 16 A时，最大rDS(on) = 5.4 mΩ\n•高性能沟道技术可实现极低的RDS(on)\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

Single-chip advanced LCD TV controller

文件：117.77 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Single-chip advanced LCD TV controller

文件：117.77 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Low-voltage Compander IC for Cordless Telephones

Overview The LA8638V provides dynamic range expansion, noise suppression for enhancing the quality of audio signals in cordless telephones and other communications systems. This single chip provides the functions that make it ideal for cordless telephones: a compressor with a logarithmic compress

文件：399.98 Kbytes 页数：16 Pages

SANYO

三洋