FDMS86181E中文资料N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ数据手册ONSEMI规格书

描述 Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

特性 Features

•Shielded Gate MOSFET Technology
• Optimized RDS* Qg Ratio
• 50% lower Qrr than other MOSFET suppliers
• Reduces Switching Spike (overshoot)
•Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
•Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
•Lowers switching noise/EMI
•MSL1 robust package design
•100% UIL tested
•RoHS Compliant

应用 Application

• This product is general usage and suitable for many different applications.
• Primary MOSFET in Isolated DC-DC
• Synchronous Rectifier
• Motor Switch
• DC-DC Power Supplies
• AC-DC Power Supplies
• Motor Control