isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

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ISC

无锡固电

N-Channel PowerTrench® MOSFET

Features „ Typ RDS(on) = 1.73mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrate

文件：456.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：523.35 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench

ONSEMI

安森美半导体