N-Channel Dual CoolTM PowerTrench SyncFETTM

文件：297.69 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel 30 V (D-S) MOSFET

文件：1.00586 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N 沟道 Dual Cool™ 33 PowerTrench® SyncFET™ 25V，40A，3.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺生产。 先进的硅技术和Dual Cool™ 封装技术完美融合，可在提供最小rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 该器件可被额外作为一个有效的单片肖特基体二极管使用。 •Dual Cool™ 顶侧冷却PQFN封装\n•VGS = 10 V，ID = 22.5A时，最大rDS(on) = 3.5mΩ\n•最大值 rDS(on) = 4.7 mΩ（VGS = 4.5 V, ID = 18 A 时）\n•通态电阻 rDS(on)极低的高性能技术\n•SyncFET肖特基体二极管\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Silicon Complementary Transistors High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Gain–Bandwidth Product • Excellent Linearity of hFE • Fast Switching Time Applications: • Display Drivers • High Speed Inverters • Converters

文件：22.78 Kbytes 页数：2 Pages

NTE

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

文件：61.32 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

文件：61.32 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体