FDB302资料datasheet下载行情报价DEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FDB302	文件：256.829 Kbytes Page：1 Pages	3 AMP FAST RECOVERY BRIDGE RECTIFIERS 文件：256.829 Kbytes 页数：1 Pages	DEC	DEC
FDN302	文件：103.44 Kbytes Page：5 Pages	P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features • –20 V, –2.4 A. Rds(on)= 0.055 Ω@ 文件：103.44 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDN302P	文件：103.44 Kbytes Page：5 Pages	P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features • –20 V, –2.4 A. Rds(on)= 0.055 Ω@ 文件：103.44 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDN302P	文件：1.83652 Mbytes Page：34 Pages	Contains all support circuitry needed for the ADS1148/ADS1248 文件：1.83652 Mbytes 页数：34 Pages	TI 德州仪器	TI

更多FDB302供应商更新时间2026-4-17 9:50:00