丝印：F1；Package：DFN3333；N-Channel Enhancement Mode Field Effect Transistor

文件：368.9 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Electromagnetic shaker system

Key features The F10 vibration generator is a reaction-type shaker generating very large dynamic forces for structural excitation in vibration research and testing. The reaction principle of operation and compact configuration allow this generator to be stud mounted in any position, directly to s

文件：197.76 Kbytes 页数：1 Pages

WILCOXON

DC-HVDC C ONVERTER

10W Features • Output Voltages from 100V to 12kV • Output Voltage Proportional to Input • Low Turn-on Voltage 0.7VDC • Input to Output Isolation • Dual Output Option • Arc & Short Circuit Protected • No Minimum Load • 3 Year Warranty Typical Applications • Mass Spectrometry • Elect

文件：3.03034 Mbytes 页数：6 Pages

XPPOWER

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.46 Kbytes 页数：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTM process features gold metal for greatly extended

文件：37.65 Kbytes 页数：2 Pages

POLYFET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended life

文件：38.32 Kbytes 页数：2 Pages

POLYFET

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

文件：660.66 Kbytes 页数：4 Pages

LITTELFUSE

力特

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

文件：195.51 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：211.92 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：146.82 Kbytes 页数：10 Pages

IRF