Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

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IRF

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：146.82 Kbytes 页数：10 Pages

IRF

HEXFET® Power MOSFET

Description\nAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro

Infineon

英飞凌

10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

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ETCList of Unclassifed Manufacturers

未分类制造商

10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

文件：34.65 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Fast Recovery Bridge Rectifier

Silicon Fast Recovery Bridge Rectifier

文件：82.59 Kbytes 页数：1 Pages

EDAL