Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

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IRF

10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

文件：34.65 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

文件：34.65 Kbytes 页数：2 Pages

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Silicon Fast Recovery Bridge Rectifier

Silicon Fast Recovery Bridge Rectifier

文件：82.59 Kbytes 页数：1 Pages

EDAL