| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
F1 | GLASS PASSIVATED FAST RECOVERY RECTIFIER | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | |
Electromagnetic shaker system Keyfeatures TheF10vibrationgeneratorisareaction-typeshakergeneratingverylargedynamicforcesforstructuralexcitationinvibrationresearchandtesting.Thereactionprincipleofoperationandcompactconfigurationallowthisgeneratortobestudmountedinanyposition,directlytos | WILCOXON Amphenol Wilcoxon Sensing Technologies. | WILCOXON | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | Polyfet | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI, LaserDriverandothers.PolyfetTMprocessfeaturesgoldmetalforgreatlyextended | Polyfet Polyfet RF Devices | Polyfet | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlife | Polyfet Polyfet RF Devices | Polyfet | ||
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS=55V RDS(on)=11mΩ ID=85A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet Polyfet RF Devices | Polyfet |
详细参数
- 型号：
F1
- 制造商：
Hirose
- 功能描述：
Unspecified Tools & Accessories REPLACEMENT SPRING FOR DF3-TA2428HC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
群鑫 |
22+ |
R-1 |
30788 |
原装正品 一级代理 |
询价 | ||
BORN(伯恩半导体) |
24+ |
SOD-123FL |
50000 |
品牌代理,价格优势,技术支持!! |
询价 | ||
恩XP |
23+ |
SOD882 |
15000 |
全新原装现货,价格优势 |
询价 | ||
DreamLNK(骏晔科技) |
2447 |
- |
315000 |
100个/袋一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
DreamLNK(骏晔科技) |
2021+ |
- |
567 |
询价 | |||
骏晔科技 |
21+ |
98 |
全新原装鄙视假货 |
询价 | |||
JXND |
24+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
INTERSIL |
2450+ |
QFN38 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
迪一 |
22+ |
N/A |
2500 |
进口原装,优势现货 |
询价 |
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