| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
F1 | GLASS PASSIVATED FAST RECOVERY RECTIFIER | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | |
Electromagnetic shaker system Keyfeatures TheF10vibrationgeneratorisareaction-typeshakergeneratingverylargedynamicforcesforstructuralexcitationinvibrationresearchandtesting.Thereactionprincipleofoperationandcompactconfigurationallowthisgeneratortobestudmountedinanyposition,directlytos | WILCOXON Amphenol Wilcoxon Sensing Technologies. | WILCOXON | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime | Polyfet Polyfet RF Devices | Polyfet | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications. SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI, LaserDriverandothers.PolyfetTMprocessfeaturesgoldmetalforgreatlyextended | Polyfet Polyfet RF Devices | Polyfet | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlife | Polyfet Polyfet RF Devices | Polyfet | ||
Fuse Blocks and Clips - For 3AG Fuses FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS=55V RDS(on)=11mΩ ID=85A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. | Polyfet Polyfet RF Devices | Polyfet |
替换型号
- 2117
- 221-364
- 276-2503
- 276-2505
- 31D8003
- 3108009
- 4116
- 416
- 443-904
- 8041016
- 8041016A
- 8116
- AM9016CDC
- AM9016CPC
- AM9016DDC
- AM9016DPC
- AM9016EDC
- AM9016EPC
- AXX3021
- AXX3055
- C014331-09
- CM4116AD
- CM4116AE
- CO1433-09
- D416
- ECG2117
- F16K3DC
- F16K4DC
- F16K5DC
- HE-443-904
- HYB4116-P2
- HYB4116-P3
- ITT4116-3
- ITT4116-4
- MB8116E
- MB8116EC
- MB8116EP
- MCM4116AC20
- MCM4116AC25
- MCM4116AC30
- MCM4116BC20
- MCM4116BC25
- MCM4116BC30
- MCM4116BP20
- MCM4116BP25
- MCM4116BP30
- MCM4116BP35
- MK4116
- MK4116-4
- MK41164-3GP
- MK4116E-2
- MK4116E-3
- MK4116E-4
- MK4116J-2
- MK4116J-3
- MK4116J-4
- MK4116J-53GP
- MK4116N-2
- MK4116N-3
- MK4116N-3GP
- MK4116N-4
- MK4116N-44GP
- MK4116P-2
- MK4116P-3
- MK4116P-4
- MM5290N-4
- MN4116
- NTE2117
- SCM90072C
- SCM90072P
- SK9832
- TCG2117
- TMVW16D-3
- TMM416D-4
- TMM416P-3
- TMS4116-20
- TMS4116-25
- UPD416
- UPD416-3
- UPD416C
- UPD416C-1
- UPD416C-2
- UPD416D
- UPD416D-1
- UPD416D-2
- X400104162
- Y130201002
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
50HZ－Thy
- 性质：
- 封装形式：
直插封装
- 极限工作电压：
200V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BSTD10...M,CS15-...,T9,5N...,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
B-10
- vtest：
200
- htest：
999900
- atest：
10
- wtest：
0
详细参数
- 型号：
F1
- 制造商：
Hirose
- 功能描述：
Unspecified Tools & Accessories REPLACEMENT SPRING FOR DF3-TA2428HC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
群鑫 |
22+ |
R-1 |
30788 |
原装正品 一级代理 |
询价 | ||
BORN(伯恩半导体) |
24+ |
SOD-123FL |
50000 |
品牌代理,价格优势,技术支持!! |
询价 | ||
NXP/恩智浦 |
23+ |
SOD882 |
15000 |
全新原装现货,价格优势 |
询价 | ||
DreamLNK(骏晔科技) |
2447 |
- |
315000 |
100个/袋一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
DreamLNK(骏晔科技) |
2021+ |
- |
567 |
询价 | |||
骏晔科技 |
21+ |
98 |
全新原装鄙视假货 |
询价 | |||
JXND |
24+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
迪一 |
22+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
迪一 |
500 |
询价 |
