EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.) VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA • Low Noise : NF=8dB (Max.)

文件：150.05 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

丝印：F1；Package：SOT-23；High Voltage Transistors

High Voltage Transistors FEATURE • Pb-Free package is available.

文件：1.21154 Mbytes 页数：5 Pages

FS

EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.29 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.) VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA

文件：346.72 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：350.8 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.29 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

丝印：BG1；Package：SOT-89；NPN Transistor

文件：408.6 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

General Purpose Transistor, SOT-23, 160V, 0.6A

• High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V \n• Low saturation Voltage : VCE(sat)=0.2V(max.) \n• Low Noise : NF=8dB (max.);

KEC

TRANSISTOR:High Volatage

First Silicon

NPN Transistor

三极管,NPN,VCBO 180V,VCEO 160V,VEBO 6A,IC 0.6A, PD 500mW,HFE 80~250,FT 100~300MHZ,Package SOT-89

TANiSemi

台奕