2N5551S

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V •LowLeakageCurrent. :ICBO=50nA(Max.)VCB=120V •LowSaturationVoltage :VCE(sat)=0.2V(Max.)IC=50mA,IB=5mA •LowNoise:NF=8dB(Max.)

2N5551S

丝印：F1；Package：SOT-23；High Voltage Transistors

HighVoltageTransistors FEATURE •Pb-Freepackageisavailable.

2N5551S

EPITAXIAL PLANAR NPN TRANSISTOR

2N5551S

TRANSISTOR:High Volatage;

2N5551S

General Purpose Transistor, SOT-23, 160V, 0.6A; • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V \n• Low Leakage Current : ICBO=50nA(max.) \n• Low saturation Voltage : VCE(sat)=0.2V(max.) \n• Low Noise : NF=8dB (max.);

2N5551SC

EPITAXIAL PLANAR NPN TRANSISTOR

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V •LowLeakageCurrent. :ICBO=50nA(Max.)VCB=120V •LowSaturationVoltage :VCE(sat)=0.2V(Max.)IC=50mA,IB=5mA

2N5551SQ

NPN Transistor;

三极管,NPN,VCBO 180V,VCEO 160V,VEBO 6A,IC 0.6A, PD 500mW,HFE 80~250,FT 100~300MHZ,Package SOT-89

TANiSemi

2N5551S_15

EPITAXIAL PLANAR NPN TRANSISTOR

2N5551S_99

EPITAXIAL PLANAR NPN TRANSISTOR

2N5551SQ

丝印：BG1；Package：SOT-89；NPN Transistor