MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 页数：1 Pages

NTE

HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

威讯联合

HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

威讯联合

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.97 Kbytes 页数：17 Pages

PANASONIC

松下