NTE23

Silicon NPN Transistor Ultra High Frequency Amp

Description: TheNTE23issuitableforalownoiseamplifierintheVHFtoUHFband. Features: ●LowNoiseFigure:NF3.0dBTyp.@f=500MHz ●HighPowerGain:Gpe15dBTyp.@f=500MHz ●HighCutoffFrequency:fT=2.0GHzTyp

NTE230

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: •CTV110°–CRTHorizontalDeflection •TracerSwitch

NTE2300

Silicon NPN Transistor High Voltage, Horizontal Output

Description: TheNTE2300isasiliconNPNtransistorinaTO3PtypepackagedesignedforuseinlargescreencolorTVdeflectioncircuits. Features: •HighBreakdownVoltageandHighReliability •HighSwitchingSpeed

NTE2301

Silicon NPN Transistor High Voltage Horizontal Output

Description: TheNTE2301isasiliconNPNpowertransistorinaTO218typepackagedesignedforuseinlargescreendeflectioncircuits. Features: •Collector–EmitterVoltage:VCEX=1500V •GlassivatedBase–CollectorJunction •SafeOperatingArea@50µs=20A,400V •Switchin

NTE2302

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: •HighBreakdownVoltageandHighReliability •HighSwitchingSpeed •CapableofBeingMountedinaVarietyofMethods

NTE2303

Silicon NPN Transistor Horizontal Deflection

Description: TheNTE2303isasiliconNPNtransistorinaTO220typepackagedesignedforuseinsmallscreenblackandwhitedeflectioncircuits. Features: •Collector–EmitterVoltage:VCEX=1500V •GlassivatedBase–CollectorJunction •SwitchingTimeswithInductiveLoads:tf=

NTE2304

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: TheNTE2304isasiliconNPNtransistorinaTO3Ptypepackage.Typicalapplicationsincluderelaydrivers,high–speedinverters,converters,andothergeneralhigh–currentswitchingapplications. Features: •LowCollector–EmitterSaturationVoltage •WideASOandResist

NTE2305

Silicon Complementary Transistors High Voltage Power Amplifier

Description: TheNTE2305(NPN)andNTE2306(PNP)aresiliconcomplementarytransistorsinaTO218typepackagedesignedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits. Features: •HighCollector–EmitterSustainingVoltage:VCEO(sus)=16

NTE2306

Silicon Complementary Transistors High Voltage Power Amplifier

Description: TheNTE2305(NPN)andNTE2306(PNP)aresiliconcomplementarytransistorsinaTO218typepackagedesignedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits. Features: •HighCollector–EmitterSustainingVoltage:VCEO(sus)=16

NTE2307

Silicon NPN Transistor High Gain Power Amp

Features: •HighVoltage •HighDCCurrentGain •HighCollectorPowerDissipationCapability