Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

文件：25.61 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor General Purpose, Medium Power

Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers.

文件：21.31 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features:
High DC Current Gain: hFE= 1000 (Min) @ IC= 25A hFE=

文件：22.83 Kbytes 页数：2 Pages

NTE

Silicon Darlington Transistors High Current, General Purpose

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC

文件：26.78 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

文件：20.82 Kbytes 页数：2 Pages

NTE

Silicon Darlington Transistors High Current, General Purpose

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC

文件：26.78 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A

文件：24.3 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A

文件：24.3 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode

Features: • High Speed: tf = 100nsec • High Breakdown Voltage: VCBO = 1500V • On–Chip Damper Diode

文件：21.84 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT

Features: • Fast speed: tf = 100ns Typ • High breakdown voltage: VCBO = 1500V • High reliability Applications: • High–definition color display horizontal deflection output

文件：20.65 Kbytes 页数：2 Pages

NTE