NTE2346

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: TheNTE2345(NPN)andNTE2346(PNP)aresiliconcomplementaryDarlingtontransistorsinan SOT–82typepackagedesignedforuseinaudiooutputstagesandgeneralamplifierandswitching applications.. Features:
HighDCCurrentGain:hFE=750(Min)@IC=3A,VCE=3V

NTE2347

Silicon NPN Transistor General Purpose, Medium Power

Description: TheNTE2347isasiliconNPNtransistorinaTO39typepackagedesignedforuseinhighcurrent, fastswitchingapplicationsandforpoweramplifiers.

NTE2348

Silicon NPN Transistor High Voltage, High Speed Switch

Description: TheNTE2349(NPN)andNTE2350(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3 typepackagedesignedforuseasoutputdevicesingeneralpurposeamplifierapplications. Features:
HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=

NTE2349

Silicon Darlington Transistors High Current, General Purpose

Description: TheNTE2349(NPN)andNTE2350(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typepackagedesignedforuseasoutputdevicesingeneralpurposeamplifierapplications. Features: •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Min)@IC

NTE235

Silicon NPN Transistor Final RF Power Output

Description: TheNTE235isanNPNsilicontransistorinaTO220typecasedesignedforuseinhighpoweroutputamplifierstagessuchascitizenbandcommunicationsequipment.

NTE2350

Silicon Darlington Transistors High Current, General Purpose

Description: TheNTE2349(NPN)andNTE2350(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typepackagedesignedforuseasoutputdevicesingeneralpurposeamplifierapplications. Features: •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Min)@IC

NTE2351

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: •HighDCCurrentGain:hFE(1)=2000Min@VCE=2V,IC=1A •LowSaturationVoltage:VCE(sat)=1.5VMax@IC=3A

NTE2352

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: •HighDCCurrentGain:hFE(1)=2000Min@VCE=2V,IC=1A •LowSaturationVoltage:VCE(sat)=1.5VMax@IC=3A

NTE2353

Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode

Features: •HighSpeed:tf=100nsec •HighBreakdownVoltage:VCBO=1500V •On–ChipDamperDiode

NTE2354

Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT

Features: •Fastspeed:tf=100nsTyp •Highbreakdownvoltage:VCBO=1500V •Highreliability Applications: •High–definitioncolordisplayhorizontaldeflectionoutput