Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors

Features: • Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver

文件：24.13 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors

Features: • Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver

文件：24.13 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Digital w/2 Built-In 22k Bias Resistors

Features: • Built–In Bias Resistor (R1 = 22kΩ, R2 = 22kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver

文件：24.09 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Digital w/2 Built-In 22k Bias Resistors

Features: • Built–In Bias Resistor (R1 = 22kΩ, R2 = 22kΩ) • Small–Sized Package (TO92 type) Applications: • Switching Circuit • Inverter • Interface Circuit • Driver

文件：24.09 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors

Digital w/2 Built–In 47k Bias Resistors Features: Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) Small–Sized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver

文件：24.11 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

文件：21.91 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors

Digital w/2 Built–In 47k Bias Resistors Features: Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) Small–Sized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver

文件：24.11 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

文件：22.67 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

文件：22.67 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current General Purpose Amp/Switch

High Current General Purpose Amp/Switch Features:
Low Saturation Voltage
Large Current Capacity and Wide ASO Applications:
Power Supplies
Relay Drivers
Lamp Drivers
Automotive Wiring

文件：22.35 Kbytes 页数：2 Pages

NTE