MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements

文件：29.41 Kbytes 页数：3 Pages

NTE

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

文件：29.39 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode, High Speed

Description: The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and mot

文件：22.89 Kbytes 页数：2 Pages

NTE

MOSFET N-Channel Enhancement Mode, High Speed Switch

Description: The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and mot

文件：22.84 Kbytes 页数：2 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

文件：26.62 Kbytes 页数：3 Pages

NTE

Silicon NPN Transistor Color TV, Horizontal Output

Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: • VCEX = 1500V • Safe Operating Area @ 50µs = 20A, 400V

文件：21.74 Kbytes 页数：2 Pages

NTE

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

文件：29.58 Kbytes 页数：3 Pages

NTE

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

文件：29.58 Kbytes 页数：3 Pages

NTE

MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl to NTE2383)

Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Lower RDS(ON) • Improved Inductive Ruggedness • Fast

文件：26.02 Kbytes 页数：3 Pages

NTE

MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382)

Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Lower RDS(ON) • Improved Inductive Ruggedness • Fast

文件：25.95 Kbytes 页数：3 Pages

NTE