HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

威讯联合

HIGH EFFICIENCY 400MHZ AMPLIFIER

Qorvo

威讯联合

HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

威讯联合

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：275.82 Kbytes 页数：8 Pages

TOSHIBA

东芝

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：207.16 Kbytes 页数：8 Pages

TOSHIBA

东芝

Pushbutton switch, side actuation, illumination

文件：976.56 Kbytes 页数：2 Pages

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