HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

文件：82.1 Kbytes 页数：8 Pages

RFMD

威讯联合

HIGH EFFICIENCY 2V POWER AMPLIFIER

Qorvo

威讯联合

HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

文件：82.1 Kbytes 页数：8 Pages

RFMD

威讯联合

317.5 MHz SAW Resonator

文件：100.53 Kbytes 页数：2 Pages

RFM

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.97 Kbytes 页数：17 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：443.54 Kbytes 页数：17 Pages

PANASONIC

松下