RF2125P数据表ic资料贸易商威讯联合RFMD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RF2125P	文件：51.51 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati 文件：51.51 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2125PCBA	文件：104.66 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati 文件：104.66 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2125PPCBA	文件：51.51 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati 文件：51.51 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2125P	文件：300 bytes Page：1 Pages	HIGH POWER LINEAR AMPLIFIER	Qorvo 威讯联合	Qorvo

更多RF2125P供应商更新时间2025-12-1 10:38:00