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RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RF2126

High Power Amplifier; • Single 3V to 6.0V Supply\r\n• 1.3W Output Power\r\n• 12dB Gain\r\n• 45% Efficiency\r\n• Power Down Mode\r\n• 400MHz to 2700MHz Operation;

The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals.\r\n\r\n The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W.

QorvoQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

RF2126_07

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RF2126PCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RF2126PCK

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

详细参数

  • 型号:

    RF2126

  • 制造商:

    RFMD

  • 制造商全称:

    RF Micro Devices

  • 功能描述:

    HIGH POWER LINEAR AMPLIFIER

供应商型号品牌批号封装库存备注价格
RFMD/威讯
25+
SOP8
12496
RFMD/威讯原装正品RF2126即刻询购立享优惠#长期有货
询价
RFMD
24+
SOP8
2000
全新原装深圳仓库现货有单必成
询价
RFMD
24+
SOP8
7410
绝对原装现货,价格低,欢迎询购!
询价
RFMD
24+
SOP-8
3822
原装优势公司现货!
询价
RFMD
24+
SOP-8
8000
只做原装正品现货
询价
RENESAS
24+
SOP
13500
免费送样原盒原包现货一手渠道联系
询价
RFMD
23+
SOP8
3600
绝对全新原装!现货!特价!请放心订购!
询价
RFMD
17+
器件和集成
6200
100%原装正品现货
询价
24+
SOP
5000
公司存货
询价
RFMD
24+
SOP-8
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多RF2126供应商 更新时间2025-7-27 14:14:00