NTE22

Silicon NPN Transistor AF PO, General Purpose Amp, Driver

Features: •HighBreakdownVoltage:VCEO=80V •LargeICCapacity:IC=1ADC •GoodhFELinearity •LowCollectorSaturationVoltage Applications: •MediumPowerOutputStages •High–VoltageDrivers

NTE221

MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: TheNTE221isanN–channeldepletiontype,dual–insulatedgate,field–effecttransistorthatutilizesMOSconstruction.ThisdevicehascharacteristicswhichmakesithighlydesirableforuseinRF–amplifierapplications. Features: •ExtremelyLowFeedbackCapacitance •

NTE222

Field Effect Transistor Dual Gate N-Channel MOSFET

FieldEffectTransistorDualGateN–ChannelMOSFET

NTE224

Silicon NPN Transistor Final RF Power Output for CB PO = 4W, 50MHz

AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector−BaseVoltage,VCBO......................60V Collector−EmitterVoltage(RBE=10Ω),VCER.........60V Emitter−BaseVoltage,VEBO.........................4V

NTE225

Silicon NPN Transistor Linear Amplifier and High Speed Switch

Description: TheNTE225isasiliconNPNtransistorinaTO39typepackage(withflange)designedforindustrialandcommercialequipment.Typicalapplicationsincludehighvoltagedifferentialandoperationalamplifiers,highvoltageinverters,andhighvoltage,lowcurrentswitchingandserie

NTE226

Germanium PNP Transistor Audio Power Amp

Description: TheNTE226isaGermaniumPNPtransistorinaTO66typepackagedesignedforhigh–fidelity,high–poweroutputapplications. AbsoluteMaximumRatings: Collector–BaseVoltage,VCBO..............................35V Collector–EmitterVoltage(RB

NTE228A

Silicon NPN Transistor High Voltage Amp, Video Output

Description: TheNTE228AisasiliconNPNtransistorinaTO202Mtypepackagedesignedforhigh–voltageTVvideoandchromaoutputcircuits,high–voltagelinearamplifiers,andhigh–voltagetransistorregulators. Features: •HighCollector–EmitterBreakdownVoltage:V(BR)CEO=350V(Min

NTE227

Silicon NPN Transistor High Voltage Amp, Video Output

NTE229

Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp