MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: • Extremely Low Feedback Capacitance •

文件：24.77 Kbytes 页数：2 Pages

NTE

JFETs (N & P Channel)

Description:\nThe NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.Features:\n• Extremely Low Feedback Capacitance\n• High Power Gai

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.22 Kbytes 页数：17 Pages

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.22 Kbytes 页数：17 Pages

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.22 Kbytes 页数：17 Pages

PANASONIC

松下