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型号	下载订购	功能描述	制造商上传企业	LOGO
DMN5L06K	文件：265.84 Kbytes Page：6 Pages	N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Features and Benefits  Low On-Re 文件：265.84 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K-7	文件：143.76 Kbytes Page：5 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat 文件：143.76 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06T	文件：139.44 Kbytes Page：5 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：139.44 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06T-7	文件：139.44 Kbytes Page：5 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：139.44 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06TK	文件：176.41 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability 文件：176.41 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06TK-7	文件：176.41 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability 文件：176.41 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06V	文件：133.68 Kbytes Page：4 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：133.68 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06V-7	文件：133.68 Kbytes Page：4 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：133.68 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06VA	文件：133.68 Kbytes Page：4 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：133.68 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06VA-7	文件：133.68 Kbytes Page：4 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：133.68 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES

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技术参数

Automotive Compliant PPAP：
On Request*
Polarity：
N+N
ESD Diodes：
Yes
VDS：
50 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.28 A
PD @ TA = +25°C：
0.25 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
RDS(ON) Max @ VGS (2.5V)：
2500 mΩ
RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
VGS (th) Max：
1 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT563

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	DMN53D0L-7	DIODES	15+	SOT23	30000	原装现货价格有优势量大可以发货	询价
深圳市粤科源兴科技有限公司	DMN5L06VK-7	DIODES	13+	SOT-563	5276	原装分销	询价
齐创科技(上海,北京,青岛)有限公司	DMN5L06VA-7	DIODES	23+	SOT563	9000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	DMN5L06VK-7	DIODES	25+	SOT563	3096	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	DMN5L06VK-7	Diodes	24+	SOT-563	7500		询价
深圳市恒创达实业有限公司	DMN5L06VK-7	DIODES	17+	NA	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	DMN5L06DWK-7	DIODES	2016+	SOT363	6590	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	DMN5L06K-7(5OV.0.3A)	DIODES	24+	SOT563	5000	全现原装公司现货	询价
深圳市佳鑫美电子科技有限公司	DMN5L06VK-7	DIODES	25+		2800	原装现货!可长期供货!	询价
千层芯半导体(深圳)有限公司	DMN5L06VAK-7	DIODES	24+	SOT	25000	一级专营品牌全新原装热卖	询价

更多DMN5供应商更新时间2026-1-29 15:02:00

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