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型号	下载订购	功能描述	制造商上传企业	LOGO
DMN53D0LDWQ-13	文件：545.38 Kbytes Page：7 Pages	丝印：MM5；Package：SOT363；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for 文件：545.38 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
DMN53D0LDWQ-7	文件：545.38 Kbytes Page：7 Pages	丝印：MM5；Package：SOT363；50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for 文件：545.38 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
DMN53D0LQ	文件：436.16 Kbytes Page：7 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • 文件：436.16 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
DMN53D0LQ-13	文件：436.16 Kbytes Page：7 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • 文件：436.16 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
DMN53D0LQ-7	文件：436.16 Kbytes Page：7 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • 文件：436.16 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
DMN53D0LT	文件：258.22 Kbytes Page：5 Pages	N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a 文件：258.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN53D0LT-13	文件：258.22 Kbytes Page：5 Pages	N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a 文件：258.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN53D0LT-7	文件：258.22 Kbytes Page：5 Pages	N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a 文件：258.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN53D0LTQ	文件：738.02 Kbytes Page：8 Pages	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony 文件：738.02 Kbytes 页数：8 Pages	DIODES 美台半导体	DIODES
DMN53D0LTQ-13	文件：738.02 Kbytes Page：8 Pages	丝印：T53；Package：SOT523；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony 文件：738.02 Kbytes 页数：8 Pages	DIODES 美台半导体	DIODES

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技术参数

Automotive Compliant PPAP：
On Request*
Polarity：
N+N
ESD Diodes：
Yes
VDS：
50 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.28 A
PD @ TA = +25°C：
0.25 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
RDS(ON) Max @ VGS (2.5V)：
2500 mΩ
RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
VGS (th) Max：
1 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT563

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	DMN53D0L-7	DIODES	15+	SOT23	30000	原装现货价格有优势量大可以发货	询价
深圳市粤科源兴科技有限公司	DMN5L06VK-7	DIODES	13+	SOT-563	5276	原装分销	询价
齐创科技(上海,北京,青岛)有限公司	DMN5L06VA-7	DIODES	23+	SOT563	9000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	DMN5L06VK-7	DIODES	25+	SOT563	3096	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	DMN5L06VK-7	Diodes	24+	SOT-563	7500		询价
深圳市恒创达实业有限公司	DMN5L06VK-7	DIODES	17+	NA	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	DMN5L06DWK-7	DIODES	2016+	SOT363	6590	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	DMN5L06K-7(5OV.0.3A)	DIODES	24+	SOT563	5000	全现原装公司现货	询价
深圳市佳鑫美电子科技有限公司	DMN5L06VK-7	DIODES	25+		2800	原装现货!可长期供货!	询价
千层芯半导体(深圳)有限公司	DMN5L06VAK-7	DIODES	24+	SOT	25000	一级专营品牌全新原装热卖	询价

更多DMN5供应商更新时间2026-1-29 9:31:00

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