DMN5数据表ic资料批发供应达尔科技DIODES-114ic电子网

首页 >DMN5>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
DMN5	文件：174.57 Kbytes Page：6 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5010VAK-13	文件：490.01 Kbytes Page：7 Pages	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5010VAK-13A	文件：490.01 Kbytes Page：7 Pages	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5010VAK-7	文件：490.01 Kbytes Page：7 Pages	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5010VAK-7A	文件：490.01 Kbytes Page：7 Pages	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5040LSS	文件：409.38 Kbytes Page：7 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. MotorControl Backlighting PowerManagementFunctions DC-DCConvert	DIODESDiodes Incorporated 达尔科技	DIODES
DMN5040LSS-13	文件：409.38 Kbytes Page：7 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. MotorControl Backlighting PowerManagementFunctions DC-DCConvert	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0LT	文件：698.71 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveappl	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0LT-13	文件：698.71 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveappl	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0LT-7	文件：698.71 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveappl	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UV	文件：943.83 Kbytes Page：8 Pages	50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualNChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UV-13	文件：943.83 Kbytes Page：8 Pages	50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualNChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UV-7	文件：943.83 Kbytes Page：8 Pages	50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualNChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UVA	文件：588.98 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UVA-13	文件：588.98 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN52D0UVA-7	文件：588.98 Kbytes Page：8 Pages	50V N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Haloge	DIODESDiodes Incorporated 达尔科技	DIODES
DMN53D0LDW	文件：268.51 Kbytes Page：5 Pages	Dual N-Channel MOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper	DIODESDiodes Incorporated 达尔科技	DIODES
DMN53D0LDW-13	文件：268.51 Kbytes Page：5 Pages	Dual N-Channel MOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper	DIODESDiodes Incorporated 达尔科技	DIODES
DMN53D0LDW-7	文件：268.51 Kbytes Page：5 Pages	Dual N-Channel MOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper	DIODESDiodes Incorporated 达尔科技	DIODES
DMN53D0LDWQ	文件：545.38 Kbytes Page：7 Pages	50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor	DIODESDiodes Incorporated 达尔科技	DIODES

12 3 4 5 6 >>>

详细参数

型号：
DMN5
制造商：
DIODES
制造商全称：
Diodes Incorporated
功能描述：
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	DMN53D0L-7	DIODES	15+	SOT23	30000	原装现货价格有优势量大可以发货	询价
深圳市粤科源兴科技有限公司	DMN5L06VK-7	DIODES	13+	SOT-563	5276	原装分销	询价
深圳好佳好科技有限公司	DMN55D0UT-7	DIODES	1436+	SOT-523	30000	绝对原装进口现货可开增值税发票	询价
深圳市力通伟业半导体有限公司	DMN5L06WK	DIODES	13+	SOT323	300000	特价热销现货库存	询价
深圳市正川电子有限公司	DMN5L06VK-7	DIODES	08+	SOT563	1436	现货-ROHO	询价
齐创科技(上海,北京,青岛)有限公司	DMN5L06VA-7	DIODES	23+	SOT563	9000	原装正品,假一罚十	询价
深圳市博浩通科技有限公司	DMN5L06TKDI	DiodesInc	23+	SOT-523	7750	全新原装优势	询价
深圳市卓越微芯电子有限公司	DMN5L06VK-7	DIODES	2020+	SOT563	3096	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	DMN5L06VK-7	Diodes	07+/08+	SOT-563	7500		询价
深圳市恒创达实业有限公司	DMN5L06VK-7	DIODES	17+	NA	6200	100%原装正品现货	询价

更多DMN5供应商更新时间2024-5-30 17:31:00

详细参数

相关规格书

相关库存