N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件：738.02 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：T53；Package：SOT523；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件：738.02 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：T53；Package：SOT523；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件：738.02 Kbytes 页数：8 Pages

DIODES

美台半导体

Dual N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very

文件：266.74 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel MOSFET

文件：243.45 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low

文件：343.56 Kbytes 页数：6 Pages

DIODES

美台半导体