| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Solutionfordesigningafixedoff-timecontrolledPFCpre-regulator | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
verylowcostvoiceandmelodysynthesizerwith4-bitsCPU GeneralDescription TheAPExx12seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)orD/Acurrentoutputs,etc.Theaudiosynthes | APLUSAPLUS APLUS | APLUS | ||
VERYLOW-COSTVOICESYNTHESIZERWITH4-BITMICROPROCESSOR 1.0GeneralDescription TheASM3112C/4112Cisverylowcostvoicesynthesizerwith4-bitmicroprocessor.Ithasvarious featuresincluding4-bitALU,ROM,RAM,I/Oports,timers,clockgenerator,watchdogtimer(WDT) voicesynthesizer,etc.Itconsistsof22instructionsinthedevice.Wit | APLUSAPLUS APLUS | APLUS | ||
30V/3AlowsaturationPNPtrIpoleintegratedwithNMOSFET | AWINICAWINIC 艾为 | AWINIC | ||
30V/3AlowsaturationPNPtrIpoleintegratedwithNMOSFET | AWINICAWINIC 艾为 | AWINIC | ||
MonolithicIGs MonolithicIGs ICsforAudioApplications •CDAmplifiers •Low-Frequency,Small-SignalAmplifiers | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
TYPECMP/CL3P ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
AmbiqAM1803RTCPowerBackupwithEnerChipBattery | CYMBETCymbet Corporation Cymbet Corporation | CYMBET | ||
MicrochipMDP79410RTCPowerBackupwithEnerChipBattery | CYMBETCymbet Corporation Cymbet Corporation | CYMBET | ||
EnerChipCCwithIntegratedPowerManagement | CYMBETCymbet Corporation Cymbet Corporation | CYMBET | ||
EnerChipCCBackupPowerforEpsonRX-8564Real-TimeClock | CYMBETCymbet Corporation Cymbet Corporation | CYMBET | ||
EpsonRX-8564RTCPowerBackupwithEnerChipBattery | CYMBETCymbet Corporation Cymbet Corporation | CYMBET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
150mA/1.2VCMOSLDORegulator ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50Ωpowergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ | CALMIRCO California Micro Devices Corp | CALMIRCO |
详细参数
- 型号：
DMN3112S
- 制造商：
DIODES
- 制造商全称：
Diodes Incorporated
- 功能描述：
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
2019+PB |
SOT-23 |
45000 |
原装正品 可含税交易 |
询价 | ||
DIODES |
08PB |
15000 |
询价 | ||||
Diodes |
20+/21+ |
SOT-23 |
9500 |
全新原装现货 |
询价 | ||
Diodes |
24+ |
SOT-23 |
45000 |
原装现货假一赔十 |
询价 | ||
DIODES/美台 |
22+ |
SOT-23 |
354000 |
询价 | |||
DMN3112S |
2019+PB |
SOT-23 |
45000 |
13632880263 |
询价 | ||
DIODES/美台 |
22+ |
45000 |
询价 | ||||
DIODES/美台 |
新年份 |
SOT-23 |
45000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
询价 | ||
Diodes |
2023+ |
SOT-23 |
7695 |
全新原厂原装产品、公司现货销售 |
询价 | ||
DIODES |
14+ |
SOT-23 |
1530 |
现货-ROHO |
询价 |
相关规格书
更多- DMN3112S-7
- DMN3112SSS
- DMN3115UDM
- DMN3135LVT-7
- DMN3150L-7
- DMN3150LW-7
- DMN3200U-7
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- DMN5_10
- DMN55D0UT
- DMN5L06
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- DMN5L06DW-7
- DMN5L06DWK_0711
- DMN5L06K
- DMN5L06K-7
- DMN5L06T
- DMN5L06TK
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- DMN5L06VA
- DMN5L06VAK
- DMN5L06VK
相关库存
更多- DMN3112SQ-7
- DMN3112SSS-13
- DMN3115UDM-7
- DMN3150L
- DMN3150LW
- DMN3200U
- DMN32D2LDF
- DMN32D2LFB4
- DMN32D2LV
- DMN3300U
- DMN3404L
- DMN3404LQ-7
- DMN3730UFB
- DMN3730UFB4-7
- DMN3730UFB-7
- DMN4009LK3
- DMN4015LK3
- DMN4025LSD-13
- DMN4027SSD-13
- DMN4027SSS-13
- DMN4030LK3_10
- DMN4031SSD-13
- DMN4034SSD-13
- DMN4034SSS-13
- DMN4036LK3_10
- DMN4040SK3-13
- DMN4468LSS
- DMN4800LSS
- DMN4800LSSL
- DMN5
- DMN5010VAK-7
- DMN55D0UT-7
- DMN5L06-7
- DMN5L06DMK_0709
- DMN5L06DW
- DMN5L06DWK
- DMN5L06DWK-7
- DMN5L06K_09
- DMN5L06K-7-CUT TAPE
- DMN5L06T-7
- DMN5L06TK-7
- DMN5L06V-7
- DMN5L06VA-7
- DMN5L06VAK-7
- DMN5L06VK-7
