DMN5L06数据手册原装现货美台半导体DIODES-114ic电子网

首页 >DMN5L06>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
DMN5L06	文件：131.9 Kbytes Page：4 Pages	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：131.9 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06-7	文件：131.9 Kbytes Page：4 Pages	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：131.9 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK	文件：144.96 Kbytes Page：5 Pages	丝印：DAB；Package：SOT-26；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device 文件：144.96 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK-7	文件：144.96 Kbytes Page：5 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device 文件：144.96 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06DMKQ	文件：608.45 Kbytes Page：6 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi 文件：608.45 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DMKQ-7	文件：608.45 Kbytes Page：6 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi 文件：608.45 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DW	文件：141.17 Kbytes Page：5 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：141.17 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06DW-7	文件：141.17 Kbytes Page：5 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) 文件：141.17 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK	文件：145.13 Kbytes Page：5 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 文件：145.13 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK-7	文件：145.13 Kbytes Page：5 Pages	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 文件：145.13 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES

技术参数

Automotive Compliant PPAP：
DMN5L06DMKQ
Polarity：
N+N
ESD Diodes：
Yes
VDS：
50 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.305 A
PD @ TA = +25°C：
0.4 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
RDS(ON) Max @ VGS (2.5V)：
2500 mΩ
RDS(ON) Max @ VGS (1.8V)：
3000 mΩ
VGS (th) Max：
1 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT26 (SC74R)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	DMN5L06VK-7	DIODES	13+	SOT-563	5276	原装分销	询价
齐创科技(上海,北京,青岛)有限公司	DMN5L06VA-7	DIODES	23+	SOT563	9000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	DMN5L06VK-7	DIODES	25+	SOT563	3096	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	DMN5L06VK-7	Diodes	24+	SOT-563	7500		询价
深圳市恒创达实业有限公司	DMN5L06VK-7	DIODES	17+	NA	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	DMN5L06DWK-7	DIODES	2016+	SOT363	6590	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	DMN5L06K-7(5OV.0.3A)	DIODES	24+	SOT563	5000	全现原装公司现货	询价
深圳市佳鑫美电子科技有限公司	DMN5L06VK-7	DIODES	25+		2800	原装现货!可长期供货!	询价
千层芯半导体(深圳)有限公司	DMN5L06VAK-7	DIODES	24+	SOT	25000	一级专营品牌全新原装热卖	询价
深圳市华来深电子有限公司	DMN5L06-7-F	D	23+	SOT-23	8560	受权代理!全新原装现货特价热卖!	询价

更多DMN5L06供应商更新时间2025-12-12 9:01:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号