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DMN5L06DMKQ

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi

DIODESDiodes Incorporated

达尔科技

DMN5L06DMKQ-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi

DIODESDiodes Incorporated

达尔科技

DMN5L06

SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice

DIODESDiodes Incorporated

达尔科技

DMN5L06DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMN5L06DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODESDiodes Incorporated

达尔科技

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMN5L06DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODESDiodes Incorporated

达尔科技

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits LowOn-Re

DIODESDiodes Incorporated

达尔科技

DMN5L06K

N-CHANNELENHANCEMENTMODEMOSFET

DIODESDiodes Incorporated

达尔科技

DMN5L06K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat

DIODESDiodes Incorporated

达尔科技

DMN5L06T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMN5L06TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DMN5L06V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DMN5L06VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DMN5L06VAK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DMN5L06VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DMN5L06W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

供应商型号品牌批号封装库存备注价格
DIODES/美台
22+
SOT26(SC74R)
90000
正规代理渠道假一赔十
询价
DIODES/美台
23+
SOT26(SC74R)
786000
全新原装假一罚十
询价
DIODES-美台
24+25+/26+27+
SOT-26
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
DIODES
15+
SOT-26
9000
库存刚更新加微13425146986
询价
DIODES/美台
2021+
SOT26
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DIODES
21+
SOT-26
26970
原装现货假一赔十
询价
DIODES
1809+
SOT-26
3675
就找我吧!--邀您体验愉快问购元件!
询价
DIODES
22+
SOT-26
32350
原装正品 假一罚十 公司现货
询价
DIODES
21+
SOT-26
5000
原装现货/假一赔十/支持第三方检验
询价
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多DMN5L06DMKQ供应商 更新时间2024-6-10 10:50:00