CED3112数据表ic资料供应商报价华瑞CET-MOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CED3112	文件：441.18 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 45A, RDS(ON) = 11mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V. 文件：441.18 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CED3112	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEF3112	文件：523.69 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：523.69 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEM3112	文件：426.43 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 11.9A, RDS(ON) = 11 mW @VGS = 10V. RDS(ON) = 15 mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 文件：426.43 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP3112	文件：523.69 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：523.69 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CED3112供应商更新时间2025-11-30 15:36:00