丝印：CSD17308；Package：VSON-CLIP；CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Optimized for 5-V gate drive • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • VSON 3.3 mm × 3.3 mm plastic package 2 Applications • Notebook point of load • Point-of-load synchronous buck in

文件：551.46 Kbytes 页数：13 Pages

TI

德州仪器

CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Optimized for 5-V gate drive • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • VSON 3.3 mm × 3.3 mm plastic package 2 Applications • Notebook point of load • Point-of-load synchronous buck in

文件：551.46 Kbytes 页数：13 Pages

TI

德州仪器

30-V N-Channel NexFET Power MOSFETs

文件：412.33 Kbytes 页数：13 Pages

TI

德州仪器

CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs

1 Features 1• Optimized for 5-V gate drive • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • VSON 3.3 mm × 3.3 mm plastic package 2 Applications • Notebook point of load • Point-of-load synchronous buck in

文件：551.46 Kbytes 页数：13 Pages

TI

德州仪器