丝印：CSD17310；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point of Load • Point-of-Load Synchronous Buck in Networking,

文件：415.55 Kbytes 页数：10 Pages

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德州仪器

30V, N-Channel NexFET??Power MOSFETs

文件：367.87 Kbytes 页数：10 Pages

TI

德州仪器

Using the TPS51916EVM-746 Complete DDR2, DDR3

文件：1.55008 Mbytes 页数：23 Pages

TI

德州仪器

丝印：CSD17310；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point of Load • Point-of-Load Synchronous Buck in Networking,

文件：415.55 Kbytes 页数：10 Pages

TI

德州仪器

采用 5mm x 6mm SON 封装的单路、5.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. • Optimized for 5V Gate Drive\n• Ultralow Qg and Qgd\n• Low Thermal Resistance\n• Avalanche Rated\n• Pb Free Terminal Plating\n• RoHS Compliant\n• Halogen Free\n• SON 5-mm × 6-mm Plastic Package\n• APPLICATIONS \n• Notebook Point of Load\n• Point-of-Load Synchronous Buck in Networking, Telecom and C;

TI

德州仪器