丝印：CSD17309；Package：VSON-CLIP；CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Notebook Point of Load • Point of Load Synchronous Buck in Net

文件：472.54 Kbytes 页数：13 Pages

TI

德州仪器

CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Notebook Point of Load • Point of Load Synchronous Buck in Net

文件：472.54 Kbytes 页数：13 Pages

TI

德州仪器

CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Notebook Point of Load • Point of Load Synchronous Buck in Net

文件：472.54 Kbytes 页数：13 Pages

TI

德州仪器

30V N-Channel NexFET??Power MOSFETs

文件：520.659 Kbytes 页数：11 Pages

TI

德州仪器