CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

30 V N-Channel FemtoFET MOSFET

文件：588.7 Kbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

30 V N-Channel FemtoFET MOSFET

文件：588.7 Kbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器