P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：389.96 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -9A, RDS(ON) =350mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package

文件：401.49 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：389.96 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Power MOSFET

文件：683.03 Kbytes 页数：6 Pages

HMSEMI

华之美半导体