N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.73234 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：MV；Package：SOT-23；N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • L

文件：956.5 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件：52.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

文件：98.34 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

文件：73.25 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

文件：73.25 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package.

文件：25.36 Kbytes 页数：2 Pages

CALOGIC

丝印：BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件：626.5 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件：626.5 Kbytes 页数：6 Pages

DIODES

美台半导体

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件：52.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体