BS170G

Small Signal MOSFET 500 mA, 60 Volts

SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*

BS170G

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170G

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

BS170KL

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems

BS170L

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

BS170P

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

BS170P

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

BS170PSTZ

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

BS170RLRA

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170RLRA

SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)