BS170L资料使用说明书供应价格美台半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BS170L	文件：25.36 Kbytes Page：2 Pages	N-Channel Enhancement-Mode MOS Transistor DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. 文件：25.36 Kbytes 页数：2 Pages	CALOGIC	CALOGIC
BS170L	文件：300 bytes Page：1 Pages	N-Channel Enhancement-Mode MOS Transistor	Calogic	Calogic
BS170P	文件：22.09 Kbytes Page：1 Pages	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 文件：22.09 Kbytes 页数：1 Pages	ZETEX	ZETEX
BS170P	文件：626.5 Kbytes Page：6 Pages	60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：626.5 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES
BS170PSTZ	文件：626.5 Kbytes Page：6 Pages	60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：626.5 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES

更多BS170L供应商更新时间2026-1-17 10:59:00