首页 >BS1>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

BS170

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件:75.64 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

BS170

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件:52.79 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BS170

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件:1.40939 Mbytes 页数:16 Pages

ONSEMI

安森美半导体

BS170_D26Z

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件:1.40939 Mbytes 页数:16 Pages

ONSEMI

安森美半导体

BS170_D27Z

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件:1.40939 Mbytes 页数:16 Pages

ONSEMI

安森美半导体

BS170_D74Z

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件:1.40939 Mbytes 页数:16 Pages

ONSEMI

安森美半导体

BS170_D75Z

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件:1.40939 Mbytes 页数:16 Pages

ONSEMI

安森美半导体

BS170F

60Volt VDS

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

文件:26.48 Kbytes 页数:1 Pages

DIODES

美台半导体

BS170FTA

丝印:7002;Package:SOT23;60V N-Channel Mosfet

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. ® Battery operated systems ® Solid-state relays

文件:985.93 Kbytes 页数:3 Pages

TECHPUBLIC

台舟电子

BS170FTA

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

文件:29.57 Kbytes 页数:1 Pages

DIODES

美台半导体

晶体管资料

  • 型号:

    BST60

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl+Di

  • 性质:

    表面帖装型 (SMD)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    350MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SB1048,2SD1470,2SD1472,2SD1511,

  • 最大耗散功率:

  • 放大倍数:

    β>2000

  • 图片代号:

    H-100

  • vtest:

    60

  • htest:

    350000000

  • atest:

    1.5

  • wtest:

    0

技术参数

  • Package name:

    SOT89

  • Size (mm):

    4.5 x 2.5 x 1.5

  • hFE [min]:

    2000

  • toff (ns):

    700

  • fT [min] (MHz):

    200

  • Polarity:

    PNP

  • IC [max] (mA):

    500

  • VCES [max] (V):

    45

  • Ptot [max] (mW):

    1300

  • Complement:

    BST50

  • hFE [max]:

    >2000

  • Automotive qualified:

    Y

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT-89
20300
NEXPERIA/安世原装特价BST60即刻询购立享优惠#长期有货
询价
25+
10
公司现货库存
询价
恩XP
SOT89
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
NEXPERIA/安世
20+
SOT-89
120000
原装正品 可含税交易
询价
ROHM/罗姆
2402+
DIP
17110
优势代理渠道,原装现货,可全系列订货
询价
恩XP
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
询价
Nexperia
25+
SOT-89
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ROHM
13+
DIP
18348
原装分销
询价
PHI
05+
原厂原装
50051
只做全新原装真实现货供应
询价
ROHM
24+
DIP
4500
询价
更多BS1供应商 更新时间2026-1-17 18:54:00