N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件：75.64 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件：52.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on). • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdow

文件：49.71 Kbytes 页数：8 Pages

PHI

飞利浦

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：51.23 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：64.519 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Input Impedance • Fast Switching Speed • CMOS Logic Compatible Input • No Thermal Runaway or Secondary BreakdFeatures

文件：66.37 Kbytes 页数：2 Pages

DIODES

美台半导体

DMOS Transistors (N-Channel)

FEATURES ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

文件：233.09 Kbytes 页数：5 Pages

GE

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：77.94 Kbytes 页数：7 Pages

SIEMENS

西门子

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

文件：77.57 Kbytes 页数：4 Pages

Motorola

摩托罗拉