BS170

TMOS FET Switching(N-Channel-Enhancement)

TMOSFETSwitching N–Channel—Enhancement

BS170

N-channel vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on). •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching. •Nosecondarybreakdow

BS170

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

BS170

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb

BS170

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features •HighInputImpedance •FastSwitchingSpeed •CMOSLogicCompatibleInput •NoThermalRunawayorSecondaryBreakdFeatures

BS170

DMOS Transistors (N-Channel)

FEATURES ♦Highinputimpedance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown

BS170

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BS170

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

BS170

N-Channel 60-V (D-S) MOSFET

BS170

N-Channel 60-V (D-S) MOSFET

BS170

N-Channel 60-V (D-S) MOSFET

BS170

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

BS170

N-Channel Enhancement Mode Field Effect Transistor

BS170F

60Volt VDS

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

BS170G

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170G

Small Signal MOSFET 500 mA, 60 Volts

SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*

BS170KL

N-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers,   Display,Memories,Transistors,etc. •BatteryOperatedSystems