N-Channel Enhancement Mode Field Effect Transistor

Features ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability.

文件：1.24409 Mbytes 页数：13 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes 页数：13 Pages

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文件：64.519 Kbytes 页数：6 Pages

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DMOS Transistors (N-Channel)

FEATURES\n♦ High input impedance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown ♦ High input impedance\n♦ High-speed switching\n♦ No minority carrier storage time\n♦ CMOS logic compatible input\n♦ No thermal runaway\n♦ No secondary breakdown;

GE

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SIPMOS® Small-Signal Transistor

• N channel\n• Enhancement mode\n• Logic Level\n• VGS(th) = 0.8...2.0V

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NJS

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

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