BS170

N-Channel 60-V (D-S) MOSFET

BS170

N-Channel 60-V (D-S) MOSFET

BS170

Small Signal MOSFET 500 mA, 60 Volts N?묬hannel TO??2 (TO??26)

BS170

N-Channel Enhancement Mode Field Effect Transistor

BS170F

60Volt VDS

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *60VoltVDS *RDS(ON)=5Ω PARTMARKINGDETAIL–MV

BS170FTA

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

BS170FTA

Marking：MV；Package：SOT-23；N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •L

BS170FTA

Marking：7002；Package：SOT23；60V N-Channel Mosfet

Application ®Dictlogicevelinterface:TTLICMOS ®Divers:rays,solenoids,lamps,hammersdisplay, memories,transistors,tc. ®Batteryoperatedsystems ®Solid-staterelays

BS170G

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The