N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

60Volt VDS

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

文件：26.48 Kbytes 页数：1 Pages

DIODES

美台半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.73234 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：7002；Package：SOT23；60V N-Channel Mosfet

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. ® Battery operated systems ® Solid-state relays

文件：985.93 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：MV；Package：SOT-23；N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • L

文件：956.5 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60Volt VDS * RDS(ON) = 5Ω PARTMARKING DETAIL – MV

文件：29.57 Kbytes 页数：1 Pages

DIODES

美台半导体

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The

文件：52.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 500 mA, 60 Volts

Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available*

文件：98.34 Kbytes 页数：4 Pages

ONSEMI

安森美半导体